GD25WB256E
- Manufactory model :
- GD25WB256E
- Packaging specifications:
- SOP16 300mil, WSON8 6x5mm, WSON8 8x6mm, TFBGA24 5x5 ball array
- Data Manual :
-
GD25WB256E Click to download
- Packaging method :
- Tape & Reel / Tube / Bulk
- Product Consulting :
- Online message QQ:
Product Description
I. Basic Positioning The GD25WB256E belongs to GigaDevice's GD25W wide-voltage series of Quad SPI NOR Flash, currently in mass production (MP). It features a full supply voltage range of 1.65V–3.6V, a large capacity of 256Mb (32MB), and is designed for battery-powered or voltage-fluctuating embedded systems by GigaDevice. II. Core Electrical Parameters - Memory Capacity: 256Mb = 32MB - Supply Voltage: 1.65V–3.6V (key feature of W series, compatible with lithium battery/3.3V systems) - Communication Interface: Standard SPI / Dual SPI / Quad SPI (defaults to 4-wire Quad at power-on) - Clock Frequency: 104MHz (supports 1/2/4 channels) Memory Architecture - Sector: 4KB - Block: 32KB / 64KB Reliability Metrics - Erase/Write Endurance: 100,000 cycles (SLC NOR) - Data Retention: 20 years (at room temperature) Temperature Grades (three options) - Commercial: -40°C to +85°C - Industrial 1: -40°C to +105°C - Industrial 2: -40°C to +125°C III. Key Hardware Features - Hardware reset pin (H/W RESET) for fast chip reset - Built-in unique 64-bit Unique ID (hardware serial number) - OTP security register with lock-bit protection for encrypted data - Read/write suspend/resume (Suspend): Allows interrupting erase/write for data reading - Multi-level write protection, supporting global/block write lock - Supports XIP (eXecute In Place) for direct code execution without caching
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