The AS4C8M16SA-6TIN is a 128Mbit (8M×16) high-speed synchronous DRAM (SDRAM) introduced by Alliance Memory. It employs 63nm technology, features industrial-grade temperature tolerance, and comes in a 54-TSOP II package that is lead-free and halogen-free. This product is suitable for high-performance memory applications such as embedded systems, industrial control, and consumer electronics.

Memory Capacity: 128Mbit (8M×16bit) Internal Architecture: 4×(2M×16bit) Memory Banks Clock Frequency: 166MHz (Cycle 6ns) Timing: CAS Latency 2/3; Access Time 5ns; Write Cycle 12ns Voltage: 3.3V±0.3V (3.0V–3.6V) Temperature: -40°C to +85°C (Industrial Grade) Interface: LVTTL Parallel Interface Package: 54-pin TSOP II (400mil, Surface Mount) Refresh: 4096 Cycles / 64ms; Supports Auto / Self-Refresh Power Management: CKE Power-Down Mode Environmental: Lead-Free, Halogen-Free, RoHS Compliant

High-speed synchronization: Fully synchronous design, pipeline architecture, 166MHz bandwidth. Programmable modes: Burst length (1/2/4/8 / full page), sequential/interleaved burst, burst stop. Low power consumption: Single 3.3V power supply, supports power-saving mode, suitable for battery-powered devices. High reliability: Industrial-grade temperature range, strong anti-interference, suitable for harsh environments. User-friendly design: Standard TSOP II package, compatible with mainstream PCB designs, simplifies mass production.

Typical Applications：

Embedded Systems (MCU/MPU External Memory) Industrial Control and Automation Equipment Network Communication Equipment (Routers, Switches) Consumer Electronics (Set-Top Boxes, Smart TVs, Gaming Consoles) Automotive Electronics (Non-Safety Critical Modules)