The UCC27516 and UCC27517 single-channel, high-speed, low-side gate driver devices effectively drive metal-oxide-semiconductor field-effect transistor (MOSFET) and insulated-gate bipolar transistor (IGBT) power switches. The design of the UCC27516 and UCC27517 minimizes shoot-through current, thereby delivering high peak source/sink current pulses to capacitive loads, while providing rail-to-rail drive capability and extremely short propagation delays (13 ns typical). At VDD = 12 V, the UCC27516 and UCC27517 provide peak source/sink (symmetrical drive) current capability of 4 A.