256Kbit FRAM Ferroelectric Memory: Capacity 256Kbit (32K×8bit), SPI serial interface, supports SPI Mode0 & Mode3, up to 20MHz clock, high-speed random read/write, no EEPROM/Flash page erase delay. Ultra-high read/write endurance: Single-byte read/write cycles up to 10¹² times, far superior to EEPROM and Flash; data can be retained for 10 years at 85°C, and up to 200 years in low-temperature environments, no data loss upon power failure. Low power consumption and wide voltage: Operating voltage 2.7V~3.6V, operating current 1.5mA, standby current only 5μA, suitable for battery-powered portable devices. Industrial-grade temperature specifications: Operating temperature range -40°C ~ +85°C, SOP-8 surface mount package, tape and reel shipping, compatible with SMT automated pick-and-place soldering. Multi-scenario applications: Widely used in industrial control, smart meters, data acquisition recorders, sensor modules, consumer electronics; original chips, Datasheet is directly downloadable.